BSZ215CHXTMA1

Specifications

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.055Ohm

Case Connection

DRAIN

Fet Type

N and P-Channel Complementary

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~175°C TJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yayın Yılı

2014

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

Number Of Elements

2

Additional Feature

AVALANCHE RATED

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

2.8nC @ 4.5V

Drain To Source Voltage Vdss

20V

Max Dual Supply Voltage

-20V

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Fet Feature

Logic Level Gate, 2.5V Drive

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

419pF @ 10V

Halogen Free

Halogen Free

Current Continuous Drain Id25

5.1A 3.2A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

11 mJ

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

S-PDSO-N5

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Pin Sayısı

8

Drain Currentmax Abs Id

5.1A

JESD-609 Kodu

e3

Continuous Drain Current Id

3.2A