BSZ15DC02KDHXTMA1

Specifications

Fabrika Tedarik Süresi

18 Weeks

Fet Feature

Logic Level Gate, 2.5V Drive

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Max Dual Supply Voltage

20V

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

2.8nC @ 4.5V

Number Of Elements

2

Additional Feature

AVALANHE RATED

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~175°C TJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

5

Yayın Yılı

2013

Ambalaj

Tape & Reel (TR)

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Power Max

2.5W

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.055Ohm

Case Connection

DRAIN

Fet Type

N and P-Channel Complementary

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate To Source Voltage Vgs

12V

Seri

Automotive, AEC-Q101, HEXFET®

Rds On Max Id Vgs

55m Ω @ 5.1A, 4.5V

Max Power Dissipation

2.5W

Vgsth Max Id

1.4V @ 110μA

Pulsed Drain Currentmax Idm

20A

Kurşunsuz Kodu

yes

Continuous Drain Current Id

3.2A

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

S-PDSO-N5

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Pin Sayısı

8

Drain Currentmax Abs Id

5.1A