BSZ0909NDXTMA1

Specifications

Current Continuous Drain Id25

20A Tc

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

360pF @ 15V

JESD-609 Kodu

e3

Yüzey Montaj

YES

Vgsth Max Id

2V @ 250μA

Pulsed Drain Currentmax Idm

40A

Kurşunsuz Kodu

yes

Rds On Max Id Vgs

18m Ω @ 9A, 10V

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

4 mJ

Jesd30 Code

S-PDSO-N8

Kılıf / Paket

8-PowerVDFN

Drain Currentmax Abs Id

4.1A

Power Max

17W

Configuration

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

8

Yayın Yılı

2013

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

30V

Fet Type

2 N-Channel (Dual)

Drainsource On Resistancemax

0.025Ohm

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Feature

Logic Level Gate, 4.5V Drive

Fabrika Tedarik Süresi

4 Weeks

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Number Of Elements

2

Drain To Source Voltage Vdss

30V

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

2.6nC @ 4.5V