Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Drain Currentmax Abs Id
- 3.1A
- Pin Sayısı
- 8
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Lead Free
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Gate To Source Voltage Vgs
- 20V
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Avalanche Energy Rating Eas
- 47 mJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Current Continuous Drain Id25
- 3.1A 2A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Additional Feature
- AVALANCHE RATED
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.11Ohm
- Pin Sayısı
- 8
- Max Dual Supply Voltage
- 60V
- Temel Parça No
- BSO615
- Transistor Element Material
- SILICON
- Power Dissipation
- 2W
- Yayın Yılı
- 1999
- Montaj
- Surface Mount
- Parça Durumu
- Obsolete
- Vgsth Max Id
- 2V @ 20μA
- Fet Type
- N and P-Channel
- Rds On Max Id Vgs
- 110m Ω @ 3.1A, 10V
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Input Capacitance Ciss Max Vds
- 380pF @ 25V
- Halogen Free
- Not Halogen Free
- Terminal Formu
- GULL WING
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 26 Weeks
- Gate Charge Qg Max Vgs
- 22.5nC @ 10V
- Number Of Elements
- 2
- Seri
- SIPMOS®
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