Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Surface Mount
- Fet Type
- N and P-Channel
- Yayın Yılı
- 1999
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 60V
- Continuous Drain Current Id
- 2A
- Rds On Max Id Vgs
- 120m Ω @ 3A, 10V
- Input Capacitance Ciss Max Vds
- 340pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- -60V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- Non-RoHS Compliant
- Number Of Elements
- 2
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain Currentmax Abs Id
- 3A
- JESD-609 Kodu
- e0
- Fet Feature
- Standard
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Current Continuous Drain Id25
- 3A 2A
- Gate To Source Voltage Vgs
- 20V
- Tepe Reflow Sıcaklığı (°C)
- 235
- Turn Off Delay Time
- 145 ns
- Rise Time
- 60ns
- Pin Sayısı
- 8
- Drainsource On Resistancemax
- 0.12Ohm
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 4V @ 20μA
- Akım Değeri
- 3A
- Parça Durumu
- Obsolete
- Power Dissipation
- 2W
- Terminal Formu
- GULL WING
- ECCN Kodu
- EAR99
- Fall Time Typ
- 95 ns
- Seri
- SIPMOS®
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 8
- Max Power Dissipation
- 2W
- Gate Charge Qg Max Vgs
- 15.5nC @ 10V
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Kurşunsuz
- Contains Lead
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