Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Contact Plating
- Tin
- Fabrika Tedarik Süresi
- 8 Weeks
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- Halogen Free
- Halogen Free
- Continuous Drain Current Id
- 5A
- Rds On Max Id Vgs
- 35m Ω @ 2.5A, 10V
- Input Capacitance Ciss Max Vds
- 870pF @ 25V
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Montaj
- Surface Mount
- Fet Type
- 2 N-Channel (Dual)
- Yayın Yılı
- 2008
- Transistor Element Material
- SILICON
- Rise Time
- 8ns
- Drainsource On Resistancemax
- 0.044Ohm
- Pin Sayısı
- 8
- Ambalaj
- Tape & Reel (TR)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 20V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Voltage Rated Dc
- 55V
- Drain Currentmax Abs Id
- 5A
- Transistor Application
- SWITCHING
- Seri
- OptiMOS™
- Terminal Sayısı
- 8
- Power Max
- 2W
- Max Power Dissipation
- 2W
- Gate Charge Qg Max Vgs
- 26nC @ 10V
- ECCN Kodu
- EAR99
- Terminal Formu
- GULL WING
- Vgsth Max Id
- 2V @ 30μA
- Akım Değeri
- 5A
- Parça Durumu
- Active
- Max Dual Supply Voltage
- 55V
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