Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Qualification Status
- Not Qualified
- Seri
- OptiMOS™
- Drain Currentmax Abs Id
- 7A
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- HTS Kodu
- 8541.29.00.95
- Terminal Sayısı
- 8
- Rds On Max Id Vgs
- 21m Ω @ 8.2A, 10V
- Parça Durumu
- Obsolete
- Vgsth Max Id
- 2V @ 100μA
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 8
- Jesd30 Code
- R-PDSO-G8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rise Time
- 13ns
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Number Of Elements
- 2
- Drain To Source Voltage Vdss
- 30V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Pulsed Drain Currentmax Idm
- 32.8A
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz
- Lead Free
- Avalanche Energy Rating Eas
- 97 mJ
- Contact Plating
- Tin
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Fet Feature
- Logic Level Gate
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Halogen Free
- Halogen Free
- Gate To Source Voltage Vgs
- 20V
- Terminal Formu
- GULL WING
- Max Dual Supply Voltage
- -30V
- Yayın Yılı
- 2011
- Gate Charge Qg Max Vgs
- 49nC @ 10V
- Continuous Drain Current Id
- 7A
- JESD-609 Kodu
- e3
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Max
- 2W
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