Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- OptiMOS™
- Transistor Element Material
- SILICON
- Qualification Status
- Not Qualified
- Terminal Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 22m Ω @ 7.7A, 10V
- Vgsth Max Id
- 2.1V @ 250μA
- Transistor Application
- SWITCHING
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Rise Time
- 2.8ns
- Contact Plating
- Tin
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Drain To Source Voltage Vdss
- 30V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Kurşunsuz Kodu
- yes
- Power Dissipation
- 1.4W
- Gate To Source Voltage Vgs
- 20V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Kodu
- EAR99
- Fet Feature
- Logic Level Gate
- Terminal Formu
- GULL WING
- Yayın Yılı
- 2009
- Ds Breakdown Voltagemin
- 30V
- Fabrika Tedarik Süresi
- 18 Weeks
- JESD-609 Kodu
- e3
- Continuous Drain Current Id
- 6A
- Gate Charge Qg Max Vgs
- 10nC @ 10V
- Fet Type
- 2 N-Channel (Dual)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Ambalaj
- Tape & Reel (TR)
- Input Capacitance Ciss Max Vds
- 800pF @ 15V
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
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