BSO215C

Specifications

Pin Sayısı

8

Jesd30 Code

R-PDSO-G8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Additional Feature

LOGIC LEVAL

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

26 mJ

Number Of Elements

2

Drain To Source Voltage Vdss

20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

14.8A

Operating Mode

ENHANCEMENT MODE

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Terminal Sayısı

8

HTS Kodu

8541.29.00.95

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Seri

SIPMOS®

Vgsth Max Id

2V @ 10μA

Parça Durumu

Obsolete

Akım Değeri

3.1A

Rds On Max Id Vgs

100m Ω @ 3.7A, 10V

Drainsource On Resistancemax

0.1Ohm

Fet Type

N and P-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

unknown

Continuous Drain Current Id

3.7A

JESD-609 Kodu

e0

Gate Charge Qg Max Vgs

11.5nC @ 10V

RoHS Durumu

Non-RoHS Compliant

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

246pF @ 25V

Fet Feature

Logic Level Gate

ECCN Kodu

EAR99

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation

2W