BSO211PNTMA1

Specifications

Rds On Max Id Vgs

67m Ω @ 4.7A, 4.5V

Parça Durumu

Obsolete

Turn On Delay Time

7.8 ns

Transistor Application

SWITCHING

Vgsth Max Id

1.2V @ 25μA

Transistor Element Material

SILICON

Seri

OptiMOS™

Fall Time Typ

23.3 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain To Source Voltage Vdss

20V

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rise Time

10.6ns

Terminal Formu

GULL WING

Turn Off Delay Time

26.3 ns

Ds Breakdown Voltagemin

20V

Yayın Yılı

2002

Radyasyon Dayanımı

No

Max Power Dissipation

2W

ECCN Kodu

EAR99

Fet Feature

Logic Level Gate

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate To Source Voltage Vgs

12V

Input Capacitance Ciss Max Vds

920pF @ 15V

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Temel Parça No

BSO211

RoHS Durumu

RoHS Compliant

Gate Charge Qg Max Vgs

23.9nC @ 4.5V

Continuous Drain Current Id

4.7A

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.067Ohm

Fet Type

2 P-Channel (Dual)