Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 67m Ω @ 4.7A, 4.5V
- Parça Durumu
- Obsolete
- Turn On Delay Time
- 7.8 ns
- Transistor Application
- SWITCHING
- Vgsth Max Id
- 1.2V @ 25μA
- Transistor Element Material
- SILICON
- Seri
- OptiMOS™
- Fall Time Typ
- 23.3 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 8
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain To Source Voltage Vdss
- 20V
- Number Of Elements
- 2
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 8
- Additional Feature
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Montaj Tipi
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rise Time
- 10.6ns
- Terminal Formu
- GULL WING
- Turn Off Delay Time
- 26.3 ns
- Ds Breakdown Voltagemin
- 20V
- Yayın Yılı
- 2002
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 2W
- ECCN Kodu
- EAR99
- Fet Feature
- Logic Level Gate
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Gate To Source Voltage Vgs
- 12V
- Input Capacitance Ciss Max Vds
- 920pF @ 15V
- Montaj
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Temel Parça No
- BSO211
- RoHS Durumu
- RoHS Compliant
- Gate Charge Qg Max Vgs
- 23.9nC @ 4.5V
- Continuous Drain Current Id
- 4.7A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drainsource On Resistancemax
- 0.067Ohm
- Fet Type
- 2 P-Channel (Dual)
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