Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 97 mJ
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 20V
- Number Of Elements
- 2
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Additional Feature
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Vgsth Max Id
- 1.2V @ 100μA
- Transistor Application
- SWITCHING
- Parça Durumu
- Obsolete
- Rds On Max Id Vgs
- 21m Ω @ 8.2A, 4.5V
- Terminal Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- OptiMOS™
- Transistor Element Material
- SILICON
- RoHS Durumu
- Non-RoHS Compliant
- Ambalaj
- Tape & Reel (TR)
- Input Capacitance Ciss Max Vds
- 2242pF @ 15V
- Montaj
- Surface Mount
- Power Max
- 2W
- Fet Type
- 2 P-Channel (Dual)
- Drainsource On Resistancemax
- 0.021Ohm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 8.2A
- Gate Charge Qg Max Vgs
- 48.6nC @ 4.5V
- Yayın Yılı
- 2002
- Ds Breakdown Voltagemin
- 20V
- Terminal Formu
- GULL WING
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fet Feature
- Logic Level Gate
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 2W
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