BSL308CL6327HTSA1

Specifications

Rds On Max Id Vgs

80m Ω @ 2A, 10V

Yayın Yılı

2011

Continuous Drain Current Id

2A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

275pF @ 15V

Current Continuous Drain Id25

2.3A 2A

Jesd30 Code

R-PDSO-G6

Number Of Elements

2

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Gate Charge Qg Max Vgs

500nC @ 10V

Terminal Formu

GULL WING

ECCN Kodu

EAR99

Seri

OptiMOS™

Terminal Sayısı

6

Parça Durumu

Obsolete

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Drain Currentmax Abs Id

2.3A

Ds Breakdown Voltagemin

30V

Kurşunsuz Kodu

yes

Drainsource On Resistancemax

0.057Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Feedback Capmax Crss

17 pF

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

30V

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Logic Level Gate

Additional Feature

AVALANCHE RATED

Max Power Dissipation

500mW

Reference Standard

AEC-Q101

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Fet Type

N and P-Channel

Vgsth Max Id

2V @ 11μA

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount