BSL215CL6327HTSA1

Specifications

Fet Type

N and P-Channel

Vgsth Max Id

1.2V @ 3.7μA

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Max Power Dissipation

500mW

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Feedback Capmax Crss

9 pF

Temel Parça No

BSL215

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate To Source Voltage Vgs

12V

Drain To Source Voltage Vdss

20V

Pin Sayısı

6

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Fet Feature

Logic Level Gate

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Ds Breakdown Voltagemin

20V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.14Ohm

Kurşunsuz Kodu

yes

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

0.73nC @ 4.5V

HTS Kodu

8541.21.00.95

Pin Sayısı

6

Seri

OptiMOS™

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Obsolete

Terminal Sayısı

6

Number Of Elements

2

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Yayın Yılı

2013

Rds On Max Id Vgs

140m Ω @ 1.5A, 4.5V

Continuous Drain Current Id

1.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

143pF @ 10V