Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N and P-Channel
- Vgsth Max Id
- 1.2V @ 3.7μA
- Montaj
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Max Power Dissipation
- 500mW
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
- Feedback Capmax Crss
- 9 pF
- Temel Parça No
- BSL215
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 12V
- Drain To Source Voltage Vdss
- 20V
- Pin Sayısı
- 6
- Additional Feature
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Fet Feature
- Logic Level Gate
- Radyasyon Dayanımı
- No
- RoHS Durumu
- RoHS Compliant
- Ds Breakdown Voltagemin
- 20V
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drainsource On Resistancemax
- 0.14Ohm
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 0.73nC @ 4.5V
- HTS Kodu
- 8541.21.00.95
- Pin Sayısı
- 6
- Seri
- OptiMOS™
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Obsolete
- Terminal Sayısı
- 6
- Number Of Elements
- 2
- Kılıf / Paket
- SOT-23-6 Thin, TSOT-23-6
- Yayın Yılı
- 2013
- Rds On Max Id Vgs
- 140m Ω @ 1.5A, 4.5V
- Continuous Drain Current Id
- 1.5A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 143pF @ 10V
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