BSG0811NDATMA1

Specifications

Terminal Formu

NO LEAD

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Fet Type

2 N-Channel (Dual) Asymmetrical

Transistor Element Material

SILICON

Max Power Dissipation

2.5W

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PDSO-N7

Rds On Max Id Vgs

3m Ω @ 20A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

41A

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Pin Sayısı

8

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Max Dual Supply Voltage

25V

Power Max

2.5W

Fet Feature

Logic Level Gate, 4.5V Drive

Avalanche Energy Rating Eas

30 mJ

Vgsth Max Id

2V @ 250μA

Ambalaj

Tape & Reel (TR)

Input Capacitance Ciss Max Vds

1100pF @ 12V

Number Of Elements

2

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Yayın Yılı

2013

Drainsource On Resistancemax

0.004Ohm

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

160A

Drain Currentmax Abs Id

19A

Gate Charge Qg Max Vgs

8.4nC @ 4.5V

Current Continuous Drain Id25

19A 41A

Case Connection

SOURCE

Fet Technology

METAL-OXIDE SEMICONDUCTOR