BSG0810NDIATMA1

Specifications

Pulsed Drain Currentmax Idm

160A

Drainsource On Resistancemax

0.004Ohm

Seri

OptiMOS™

Yayın Yılı

2013

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~155°C TJ

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Number Of Elements

2

Input Capacitance Ciss Max Vds

1040pF @ 12V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

7

Parça Durumu

Active

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Case Connection

SOURCE

Current Continuous Drain Id25

19A 39A

Gate Charge Qg Max Vgs

8.4nC @ 4.5V

JESD-609 Kodu

e3

Drain Currentmax Abs Id

19A

Continuous Drain Current Id

39A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

3m Ω @ 20A, 10V

Jesd30 Code

R-PDSO-N7

REACH Uyumluluk Kodu

not_compliant

Max Power Dissipation

2.5W

Transistor Element Material

SILICON

Fet Type

2 N-Channel (Dual) Asymmetrical

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Terminal Formu

NO LEAD

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

2V @ 250μA

Avalanche Energy Rating Eas

30 mJ

Fet Feature

Logic Level Gate, 4.5V Drive

Gate To Source Voltage Vgs

16V

Power Max

2.5W

Max Dual Supply Voltage

25V

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE