BSD840NH6327XTSA1

Specifications

Turn Off Delay Time

7.8 ns

Montaj

Surface Mount

Number Of Channels

2

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Seri

OptiMOS™

Kurşunsuz Kodu

yes

Turn On Delay Time

1.9 ns

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain Currentmax Abs Id

3.5A

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

0.26nC @ 2.5V

Fabrika Tedarik Süresi

10 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Temel Parça No

BSD840

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Max Junction Temperature Tj

150°C

Terminal Formu

GULL WING

Uzunluk

2mm

Rds On Max Id Vgs

400m Ω @ 880mA, 2.5V

Power Dissipation

500mW

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Lead Free

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Feature

Logic Level Gate

Vgsth Max Id

750mV @ 1.6μA

Drain To Source Breakdown Voltage

20V

Max Dual Supply Voltage

20V

Gate To Source Voltage Vgs

8V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

6-VSSOP, SC-88, SOT-363

Input Capacitance Ciss Max Vds

78pF @ 10V

Number Of Elements

2

Pin Sayısı

6

Drainsource On Resistancemax

0.4Ohm

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

550mV

Yayın Yılı

2011