BSC0911NDATMA1

Specifications

Terminal Sayısı

6

Fabrika Tedarik Süresi

18 Weeks

Parça Durumu

Active

Case Connection

DRAIN SOURCE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Contact Plating

Tin

Current Continuous Drain Id25

18A 30A

Gate Charge Qg Max Vgs

12nC @ 4.5V

JESD-609 Kodu

e3

Seri

OptiMOS™

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Kılıf / Paket

8-PowerTDFN

Turn Off Delay Time

25 ns

Fall Time Typ

4 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1600pF @ 12V

Number Of Elements

2

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Ambalaj

Cut Tape (CT)

Drain To Source Breakdown Voltage

25V

Fet Feature

Logic Level Gate, 4.5V Drive

Vgsth Max Id

2V @ 250μA

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Pin Sayısı

8

Element Configuration

Dual

Radyasyon Dayanımı

No

Rds On Max Id Vgs

3.2m Ω @ 20A, 10V

Jesd30 Code

R-PDSO-N6

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

30A

Power Dissipation

2.5W

Fet Type

2 N-Channel (Dual) Asymmetrical

Transistor Element Material

SILICON

Max Power Dissipation

1W

Rise Time

5.4ns