Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 6
- Fabrika Tedarik Süresi
- 18 Weeks
- Parça Durumu
- Active
- Case Connection
- DRAIN SOURCE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Contact Plating
- Tin
- Current Continuous Drain Id25
- 18A 30A
- Gate Charge Qg Max Vgs
- 12nC @ 4.5V
- JESD-609 Kodu
- e3
- Seri
- OptiMOS™
- Yayın Yılı
- 2013
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- no
- Kılıf / Paket
- 8-PowerTDFN
- Turn Off Delay Time
- 25 ns
- Fall Time Typ
- 4 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Input Capacitance Ciss Max Vds
- 1600pF @ 12V
- Number Of Elements
- 2
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Ambalaj
- Cut Tape (CT)
- Drain To Source Breakdown Voltage
- 25V
- Fet Feature
- Logic Level Gate, 4.5V Drive
- Vgsth Max Id
- 2V @ 250μA
- Gate To Source Voltage Vgs
- 20V
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 8
- Element Configuration
- Dual
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 3.2m Ω @ 20A, 10V
- Jesd30 Code
- R-PDSO-N6
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 30A
- Power Dissipation
- 2.5W
- Fet Type
- 2 N-Channel (Dual) Asymmetrical
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 1W
- Rise Time
- 5.4ns
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