Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 1W
- Fet Type
- 2 N-Channel (Dual) Asymmetrical
- Halogen Free
- Halogen Free
- Montaj Tipi
- Surface Mount
- Terminal Formu
- NO LEAD
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 31A
- Jesd30 Code
- R-PDSO-N6
- Rds On Max Id Vgs
- 4.6m Ω @ 25A, 10V
- REACH Uyumluluk Kodu
- not_compliant
- Pin Sayısı
- 8
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Vgsth Max Id
- 2V @ 250μA
- Fet Feature
- Logic Level Gate, 4.5V Drive
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain To Source Voltage Vdss
- 25V
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kılıf / Paket
- 8-PowerTDFN
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 4500pF @ 12V
- Number Of Elements
- 2
- Montaj
- Surface Mount
- Drainsource On Resistancemax
- 0.0059Ohm
- Seri
- OptiMOS™
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Ds Breakdown Voltagemin
- 25V
- Yayın Yılı
- 2012
- Current Continuous Drain Id25
- 11A 31A
- Drain Currentmax Abs Id
- 11A
- JESD-609 Kodu
- e3
- Gate Charge Qg Max Vgs
- 6.6nC @ 4.5V
- Fabrika Tedarik Süresi
- 18 Weeks
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