BSC0910NDIATMA1

Specifications

Transistor Element Material

SILICON

Max Power Dissipation

1W

Fet Type

2 N-Channel (Dual) Asymmetrical

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Terminal Formu

NO LEAD

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

31A

Jesd30 Code

R-PDSO-N6

Rds On Max Id Vgs

4.6m Ω @ 25A, 10V

REACH Uyumluluk Kodu

not_compliant

Pin Sayısı

8

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

2V @ 250μA

Fet Feature

Logic Level Gate, 4.5V Drive

Ambalaj

Tape & Reel (TR)

Configuration

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Drain To Source Voltage Vdss

25V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

4500pF @ 12V

Number Of Elements

2

Montaj

Surface Mount

Drainsource On Resistancemax

0.0059Ohm

Seri

OptiMOS™

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

25V

Yayın Yılı

2012

Current Continuous Drain Id25

11A 31A

Drain Currentmax Abs Id

11A

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

6.6nC @ 4.5V

Fabrika Tedarik Süresi

18 Weeks