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C3 ChipZentronix
BFR93AE6327HTSA1

Infineon Technologies

BFR93AE6327HTSA1

RF BJT Transistors

In StockRoHS: Compliant

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Specifications

Çalışma Sıcaklığı
150°C TJ
Kurşunsuz Kodu
yes
Contact Plating
Tin
Pin Sayısı
3
Currentcollector Ic Max
90mA
Terminal Pozisyonu
DUAL
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Collectorbase Capacitancemax
0.9pF
Yükseklik
1mm
ECCN Kodu
EAR99
Collector Base Voltage Vcbo
20V
Yayın Yılı
1999
Parça Durumu
Active
Genişlik
1.3mm
Montaj
Surface Mount
Temel Parça No
BFR93
Transistor Element Material
SILICON
Max Power Dissipation
300mW
Gain
9.5dB ~ 14.5dB
Polaritychannel Type
NPN
Halogen Free
Not Halogen Free
Radyasyon Dayanımı
No
Nem Hassasiyeti (MSL)
1 (Unlimited)
Akım Değeri
90mA
Fabrika Tedarik Süresi
4 Weeks
JESD-609 Kodu
e3
Number Of Elements
1
Ambalaj
Tape & Reel (TR)
RoHS Durumu
ROHS3 Compliant
Voltage Rated Dc
12V
Frekans
6GHz
Terminal Formu
GULL WING
Transistor Type
NPN
Kurşunsuz
Lead Free
Max Collector Current
90mA
Power Dissipation
300mW
Emitter Base Voltage Vebo
2V
Noise Figure Db Typ F
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Element Configuration
Single
Uzunluk
2.9mm

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