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BFR92WH6327XTSA1

Infineon Technologies

BFR92WH6327XTSA1

RF BJT Transistors

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Specifications

Terminal Sayısı
3
Montaj Tipi
Surface Mount
Transistor Application
SWITCHING
Collector Emitter Voltage Vceo
15V
Transition Frequency
5000MHz
Dc Current Gain Hfe Min Ic Vce
70 @ 15mA 8V
Noise Figure Db Typ F
1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Max Collector Current
45mA
Power Dissipation
280mW
Emitter Base Voltage Vebo
2.5V
Transistor Type
NPN
Terminal Formu
GULL WING
Frekans
5GHz
Maks. Çalışma Sıcaklığı
150°C
RoHS Durumu
RoHS Compliant
Ambalaj
Tape & Reel (TR)
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Polaritychannel Type
NPN
Radyasyon Dayanımı
No
Gain
11.5dB ~ 17dB
Max Power Dissipation
280mW
Min. Çalışma Sıcaklığı
-65°C
Temel Parça No
BFR92
Collectoremitter Breakdown Voltage
15V
Montaj
Surface Mount
Max Breakdown Voltage
15V
Parça Durumu
Obsolete
Collector Base Voltage Vcbo
20V
Yayın Yılı
2012
ECCN Kodu
EAR99
Collectorbase Capacitancemax
0.6pF
Kılıf / Paket
SC-70, SOT-323
Terminal Pozisyonu
DUAL
Configuration
SINGLE
Pin Sayısı
3

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