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BFR183WH6327XTSA1

Infineon Technologies

BFR183WH6327XTSA1

RF BJT Transistors

In StockRoHS: Compliant

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Specifications

Gain
18.5dB
Max Power Dissipation
450mW
Transistor Element Material
SILICON
Radyasyon Dayanımı
No
Polaritychannel Type
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj
Surface Mount
Collectoremitter Breakdown Voltage
12V
Temel Parça No
BFR183
ECCN Kodu
EAR99
Collector Base Voltage Vcbo
20V
Yayın Yılı
2007
Parça Durumu
Obsolete
Çalışma Sıcaklığı
150°C TJ
Currentcollector Ic Max
65mA
Configuration
SINGLE
Pin Sayısı
3
Kılıf / Paket
SC-70, SOT-323
Collectorbase Capacitancemax
0.7pF
Terminal Pozisyonu
DUAL
Dc Current Gain Hfe Min Ic Vce
70 @ 15mA 8V
Transition Frequency
8000MHz
Collector Emitter Voltage Vceo
12V
Terminal Sayısı
3
Montaj Tipi
Surface Mount
Transistor Application
AMPLIFIER
Transistor Type
NPN
Noise Figure Db Typ F
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Max Collector Current
65mA
Emitter Base Voltage Vebo
2V
Power Dissipation
450mW
RoHS Durumu
RoHS Compliant
Terminal Formu
GULL WING
Frekans
8GHz
Number Of Elements
1
Ambalaj
Tape & Reel (TR)

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