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C3 ChipZentronix
BFP740E6327HTSA1

Infineon Technologies

BFP740E6327HTSA1

RF BJT Transistors

In StockRoHS: Compliant

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Specifications

Collector Emitter Voltage Vceo
4V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Max Power Dissipation
160mW
Gain
27dB
Dc Current Gain Hfe Min Ic Vce
160 @ 25mA 3V
Temel Parça No
BFP740
Power Max
160mW
Transistor Type
NPN
Montaj
Surface Mount
Collectoremitter Breakdown Voltage
4.7V
Max Collector Current
30mA
Noise Figure Db Typ F
0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Frequency Transition
42GHz
Parça Durumu
Obsolete
Max Breakdown Voltage
4.7V
RoHS Durumu
RoHS Compliant
Collector Base Voltage Vcbo
13V
Yayın Yılı
2011
Kılıf / Paket
SC-82A, SOT-343
Ambalaj
Tape & Reel (TR)
Çalışma Sıcaklığı
150°C TJ
Contact Plating
Tin
Pin Sayısı
4

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