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BFP 650F E6327

Infineon Technologies

BFP 650F E6327

RF BJT Transistors

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Voltage Collector Emitter Breakdown Max
4.5V
Polaritychannel Type
NPN
Transistor Element Material
SILICON GERMANIUM
Gain
11dB ~ 21.5dB
Yüzey Montaj
YES
Temel Parça No
BFP650
Frequency Transition
42GHz
Highest Frequency Band
L B
Parça Durumu
Obsolete
Yayın Yılı
2010
Terminal Pozisyonu
DUAL
Kılıf / Paket
4-SMD, Flat Leads
Currentcollector Ic Max
150mA
Configuration
SINGLE
Çalışma Sıcaklığı
150°C TJ
Transistor Application
AMPLIFIER
Terminal Sayısı
4
Montaj Tipi
Surface Mount
Transition Frequency
42000MHz
Dc Current Gain Hfe Min Ic Vce
110 @ 80mA 3V
Power Max
500mW
Noise Figure Db Typ F
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Transistor Type
NPN
REACH Uyumluluk Kodu
compliant
Jesd30 Code
R-PDSO-F4
Ambalaj
Tape & Reel (TR)
Number Of Elements
1

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