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BFP 640 H6433

Infineon Technologies

BFP 640 H6433

RF BJT Transistors

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Specifications

Transistor Application
AMPLIFIER
Terminal Sayısı
4
Montaj Tipi
Surface Mount
Transition Frequency
40000MHz
Dc Current Gain Hfe Min Ic Vce
110 @ 30mA 3V
Reference Standard
AEC-Q101
Power Max
200mW
Noise Figure Db Typ F
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Transistor Type
NPN
Terminal Formu
GULL WING
REACH Uyumluluk Kodu
compliant
Jesd30 Code
R-PDSO-G4
Ambalaj
Tape & Reel (TR)
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Voltage Collector Emitter Breakdown Max
4.5V
Polaritychannel Type
NPN
Transistor Element Material
SILICON GERMANIUM
Gain
24dB
Yüzey Montaj
YES
Temel Parça No
BFP640
Additional Feature
LOW NOISE, HIGH RELIABILITY
Frequency Transition
40GHz
Highest Frequency Band
C B
Parça Durumu
Obsolete
Yayın Yılı
2007
Terminal Pozisyonu
DUAL
Collectorbase Capacitancemax
0.2pF
Kılıf / Paket
SC-82A, SOT-343
Currentcollector Ic Max
50mA
Configuration
SINGLE
Çalışma Sıcaklığı
150°C TJ

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