Volume pricing
- 1+ pcs$0.17
- 10+ pcs$0.16
- 100+ pcs$0.15
- 500+ pcs$0.15
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Collector Current
- 50mA
- Power Dissipation
- 200mW
- Emitter Base Voltage Vebo
- 1.2V
- Noise Figure Db Typ F
- 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
- Transistor Type
- NPN
- Kurşunsuz
- Lead Free
- Transistor Application
- AMPLIFIER
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 4
- Collector Emitter Voltage Vceo
- 4V
- Transition Frequency
- 40000MHz
- Dc Current Gain Hfe Min Ic Vce
- 110 @ 30mA 3V
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Frekans
- 40GHz
- Terminal Formu
- GULL WING
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Temel Parça No
- BFP640
- Additional Feature
- LOW NOISE, HIGH RELIABILITY
- Collectoremitter Breakdown Voltage
- 4V
- Reach Svhc
- No SVHC
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 4 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Collector Emitter Breakdown Max
- 4.5V
- Polaritychannel Type
- NPN
- Halogen Free
- Halogen Free
- Transistor Element Material
- SILICON GERMANIUM
- Max Power Dissipation
- 200mW
- Gain
- 12.5dB
- Terminal Pozisyonu
- DUAL
- Kılıf / Paket
- SC-82A, SOT-343
- Collectorbase Capacitancemax
- 0.2pF
- Pin Sayısı
- 4
- Configuration
- SINGLE
- Çalışma Sıcaklığı
- 150°C TJ
- Max Breakdown Voltage
- 4.5V
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