Volume pricing
- 1+ pcs$0.23
- 10+ pcs$0.21
- 100+ pcs$0.20
- 500+ pcs$0.19
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Number Of Elements
- 1
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kurşunsuz
- Lead Free
- Transistor Type
- NPN
- Noise Figure Db Typ F
- 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
- Max Collector Current
- 80mA
- Power Max
- 185mW
- Reference Standard
- AEC-Q101
- Dc Current Gain Hfe Min Ic Vce
- 110 @ 50mA 1.5V
- Transition Frequency
- 65000MHz
- Collector Emitter Voltage Vceo
- 2.3V
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 4
- Transistor Application
- AMPLIFIER
- Contact Plating
- Tin
- Çalışma Sıcaklığı
- 150°C TJ
- Configuration
- SINGLE
- Pin Sayısı
- 4
- Kılıf / Paket
- 4-SMD, Flat Leads
- Collectorbase Capacitancemax
- 0.2pF
- Terminal Pozisyonu
- DUAL
- ECCN Kodu
- EAR99
- Collector Base Voltage Vcbo
- 7.5V
- Yayın Yılı
- 2005
- Highest Frequency Band
- C B
- Parça Durumu
- Active
- Frequency Transition
- 65GHz
- Max Breakdown Voltage
- 2.8V
- Montaj
- Surface Mount
- Collectoremitter Breakdown Voltage
- 2.8V
- Additional Feature
- LOW NOISE, HIGH RELIABILITY
- Temel Parça No
- BFP620
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gain
- 21dB ~ 10dB
- Transistor Element Material
- SILICON GERMANIUM
- Max Power Dissipation
- 185mW
- Polaritychannel Type
- NPN
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