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BFG135AE6327XT

Infineon Technologies

BFG135AE6327XT

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.46
  • 10+ pcs$0.44
  • 100+ pcs$0.41
  • 500+ pcs$0.39

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RoHS

Compliant

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Specifications

Montaj
Surface Mount
Power Max
1W
Collector Base Voltage Vcbo
25V
Gain
9dB ~ 14dB
Collector Emitter Voltage Vceo
15V
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
Maks. Çalışma Sıcaklığı
150°C
Currentcollector Ic Max
150mA
Parça Durumu
Discontinued
Transistor Type
NPN
RoHS Durumu
ROHS3 Compliant
Power Dissipation
1W
Yayın Yılı
2007
Max Collector Current
150mA
Dc Current Gain Hfe Min Ic Vce
80 @ 100mA 8V
Frequency Transition
6GHz
Number Of Elements
1
Kılıf / Paket
TO-261-4, TO-261AA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frekans
6GHz
Max Power Dissipation
1W
Tedarikçi Cihaz Paketi
PG-SOT223-4
Polarity
NPN
Pin Sayısı
4
Min. Çalışma Sıcaklığı
-65°C
Noise Figure Db Typ F
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Temel Parça No
BFG135
Emitter Base Voltage Vebo
2V
Collectoremitter Breakdown Voltage
15V
Voltage Collector Emitter Breakdown Max
15V

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