Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Turn On Delay Time
- 10 ns
- Number Of Elements
- 2
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Rise Time
- 55ns
- Reference Standard
- AEC-Q101
- Element Configuration
- Dual
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Avalanche Energy Rating Eas
- 66 mJ
- Max Power Dissipation
- 50W
- Rds On Max Id Vgs
- 5.9m Ω @ 40A, 10V
- Terminal Sayısı
- 6
- Fall Time Typ
- 42 ns
- Kılıf / Paket
- 8-PowerTDFN
- Continuous Drain Current Id
- 50A
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Montaj Tipi
- Surface Mount
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 2250pF @ 25V
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Fet Feature
- Standard
- Fabrika Tedarik Süresi
- 11 Weeks
- Gate Charge Qg Max Vgs
- 60nC @ 10V
- Vgsth Max Id
- 3.9V @ 50μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Number Of Channels
- 2
- Yayın Yılı
- 2014
- Drain To Source Voltage Vdss
- 40V
- Terminal Formu
- FLAT
- Additional Feature
- ULTRA LOW RESISTANCE
- Fet Type
- 2 N-Channel (Dual)
- Seri
- HEXFET®
- Gate To Source Voltage Vgs
- 20V
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