Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Pin Sayısı
- 8
- Turn On Delay Time
- 14 ns
- Parça Durumu
- Not For New Designs
- Drain To Source Breakdown Voltage
- -55V
- Rise Time
- 10ns
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Dual
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time Typ
- 22 ns
- Terminal Sayısı
- 8
- Avalanche Energy Rating Eas
- 114 mJ
- Max Power Dissipation
- 2W
- Rds On Max Id Vgs
- 105m Ω @ 3.4A, 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- Threshold Voltage
- -1V
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 3.4A
- Fet Feature
- Logic Level Gate
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 690pF @ 25V
- Power Dissipation
- 2W
- Transistor Element Material
- SILICON
- Reach Svhc
- No SVHC
- Montaj
- Surface Mount
- Genişlik
- 4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 3V @ 250μA
- Gate Charge Qg Max Vgs
- 38nC @ 10V
- Fabrika Tedarik Süresi
- 10 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 20V
- Seri
- Automotive, AEC-Q101, HEXFET®
- Drainsource On Resistancemax
- 0.105Ohm
- Terminal Formu
- GULL WING
- Fet Type
- 2 P-Channel (Dual)
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