Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Matte Tin (Sn)
- Uzunluk
- 5mm
- Yayın Yılı
- 2011
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Terminal Formu
- GULL WING
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Yükseklik
- 1.5mm
- Fet Type
- N and P-Channel
- Seri
- HEXFET®
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain Currentmax Abs Id
- 6.5A
- Genişlik
- 4mm
- Fabrika Tedarik Süresi
- 26 Weeks
- Gate Charge Qg Max Vgs
- 33nC @ 10V
- Vgsth Max Id
- 3V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Reach Svhc
- No SVHC
- Nominal Vgs
- 1 V
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 650pF @ 25V
- Power Dissipation
- 2W
- RoHS Durumu
- ROHS3 Compliant
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- 4.9A
- Threshold Voltage
- 1V
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rds On Max Id Vgs
- 29m Ω @ 5.8A, 10V
- Max Power Dissipation
- 2W
- Terminal Sayısı
- 8
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Pulsed Drain Currentmax Idm
- 30A
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Dual
- Current Continuous Drain Id25
- 6.5A 4.9A
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