AUIRF7319Q

Specifications

Jesd30 Code

R-PDSO-G8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn)

Ds Breakdown Voltagemin

30V

Drain To Source Voltage Vdss

30V

Yayın Yılı

2007

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fet Type

N and P-Channel

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.029Ohm

Jedec95 Code

MS-012AA

Seri

HEXFET®

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

6.5A

Gate Charge Qg Max Vgs

33nC @ 10V

Vgsth Max Id

3V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

compliant

Input Capacitance Ciss Max Vds

650pF @ 25V

RoHS Durumu

RoHS Compliant

Fet Feature

Logic Level Gate

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

29m Ω @ 5.8A, 10V

Avalanche Energy Rating Eas

82 mJ

Pulsed Drain Currentmax Idm

30A

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tube

Power Max

2W

Tepe Reflow Sıcaklığı (°C)

260

Current Continuous Drain Id25

6.5A 4.9A

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Obsolete

Number Of Elements

2