Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 58m Ω @ 4.9A, 10V
- Max Power Dissipation
- 2W
- Avalanche Energy Rating Eas
- 140 mJ
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 8
- Fall Time Typ
- 32 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Pulsed Drain Currentmax Idm
- 30A
- Continuous Drain Current Id
- -4.9A
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Threshold Voltage
- -1V
- Radyasyon Dayanımı
- No
- Parça Durumu
- Active
- Turn On Delay Time
- 13 ns
- Drain To Source Breakdown Voltage
- -30V
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Pin Sayısı
- 8
- Number Of Elements
- 2
- Element Configuration
- Dual
- Rise Time
- 13ns
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Yükseklik
- 1.5mm
- Fet Type
- 2 P-Channel (Dual)
- Terminal Formu
- GULL WING
- Uzunluk
- 5mm
- Drain To Source Voltage Vdss
- 30V
- Yayın Yılı
- 2011
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Seri
- HEXFET®
- Terminal Kaplaması
- Matte Tin (Sn)
- Turn Off Delay Time
- 34 ns
- Input Capacitance Ciss Max Vds
- 710pF @ 25V
- Power Dissipation
- 2W
- Transistor Element Material
- SILICON
- Fet Feature
- Logic Level Gate
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