Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 755pF @ 25V
- Power Dissipation
- 2.4W
- Transistor Element Material
- SILICON
- Fet Feature
- Logic Level Gate
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 8 Weeks
- Gate Charge Qg Max Vgs
- 33nC @ 10V
- Vgsth Max Id
- 3V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reach Svhc
- No SVHC
- Montaj
- Surface Mount
- Fet Type
- 2 N-Channel (Dual)
- Terminal Formu
- GULL WING
- Drain To Source Voltage Vdss
- 30V
- Yayın Yılı
- 2011
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Seri
- HEXFET®
- Turn Off Delay Time
- 21 ns
- Parça Durumu
- Active
- Turn On Delay Time
- 3.7 ns
- Drain To Source Breakdown Voltage
- 30V
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Number Of Elements
- 2
- Reference Standard
- AEC-Q101
- Rise Time
- 7.3ns
- Ambalaj
- Tape & Reel (TR)
- Rds On Max Id Vgs
- 29m Ω @ 6.9A, 10V
- Max Power Dissipation
- 2.4W
- Avalanche Energy Rating Eas
- 450 mJ
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time Typ
- 11 ns
- Terminal Sayısı
- 8
- Continuous Drain Current Id
- 6.9A
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Threshold Voltage
- 3V
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