AUIRF7313Q

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

29m Ω @ 6.9A, 10V

Avalanche Energy Rating Eas

450 mJ

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Currentmax Idm

58A

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

HTS Kodu

8541.29.00.95

Parça Durumu

Obsolete

Number Of Elements

2

Yüzey Montaj

YES

Transistor Application

SWITCHING

Reference Standard

AEC-Q101

Power Max

2.4W

Ambalaj

Tube

Current Continuous Drain Id25

6.9A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

30V

Yayın Yılı

2014

Fet Type

2 N-Channel (Dual)

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.029Ohm

Jedec95 Code

MS-012AA

Seri

HEXFET®

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

6.9A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Jesd30 Code

R-PDSO-G8

Ds Breakdown Voltagemin

30V

Power Dissipationmax Abs

2.4W

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

compliant

Input Capacitance Ciss Max Vds

755pF @ 25V

RoHS Durumu

RoHS Compliant

Fet Feature

Logic Level Gate

Gate Charge Qg Max Vgs

33nC @ 10V

Vgsth Max Id

3V @ 250μA