Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 4mm
- Fabrika Tedarik Süresi
- 26 Weeks
- Gate Charge Qg Max Vgs
- 22nC @ 4.5V
- Vgsth Max Id
- 1.5V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Reach Svhc
- No SVHC
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 610pF @ 15V
- Power Dissipation
- 2W
- RoHS Durumu
- ROHS3 Compliant
- Fet Feature
- Logic Level Gate
- Turn Off Delay Time
- 51 ns
- Terminal Kaplaması
- Matte Tin (Sn)
- Uzunluk
- 5mm
- Drain To Source Voltage Vdss
- 20V
- Yayın Yılı
- 2015
- Terminal Formu
- GULL WING
- Drainsource On Resistancemax
- 0.09Ohm
- Additional Feature
- HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- Yükseklik
- 1.5mm
- Fet Type
- 2 P-Channel (Dual)
- Seri
- HEXFET®
- Gate To Source Voltage Vgs
- 12V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rise Time
- 26ns
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Dual
- Drain To Source Breakdown Voltage
- -20V
- Turn On Delay Time
- 8.4 ns
- Parça Durumu
- Discontinued
- Number Of Elements
- 2
- Pin Sayısı
- 8
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 4.3A
- Operating Mode
- ENHANCEMENT MODE
- Threshold Voltage
- -700mV
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
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