2ED21824S06JXUMA1

Specifications

Gate Type

IGBT, N-Channel MOSFET

High Side Voltage Max Bootstrap

650V

Nem Hassasiyeti (MSL)

3 (168 Hours)

Rise Fall Time Typ

15ns 15ns

Fabrika Tedarik Süresi

18 Weeks

Montaj Tipi

Surface Mount

Kılıf / Paket

14-SOIC (0.154, 3.90mm Width)

Besleme Gerilimi

10V~20V

Driver Configuration

Half-Bridge

Parça Durumu

Active

Logic Voltagevil Vih

1.1V 1.7V

Current Peak Output Source Sink

2.5A 2.5A

Ambalaj

Tape & Reel (TR)

Number Of Drivers

1

Giriş Tipi

Non-Inverting

RoHS Durumu

ROHS3 Compliant

Channel Type

Synchronous

Çalışma Sıcaklığı

-40°C~125°C TA