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Infineon Technologies

2ED2108S06FXUMA1

Gate Drivers ICs

RoHS: Compliant

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Specifications

Gate Type
IGBT, N-Channel MOSFET
High Side Voltage Max Bootstrap
650V
Rise Fall Time Typ
100ns 35ns
Nem Hassasiyeti (MSL)
3 (168 Hours)
Fabrika Tedarik Süresi
24 Weeks
Montaj Tipi
Surface Mount
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Besleme Gerilimi
10V~20V
Driver Configuration
Half-Bridge
Parça Durumu
Active
Logic Voltagevil Vih
1.1V 1.7V
Current Peak Output Source Sink
290mA 700mA
Number Of Drivers
1
Ambalaj
Tape & Reel (TR)
Giriş Tipi
Non-Inverting
RoHS Durumu
ROHS3 Compliant
Channel Type
Synchronous
Çalışma Sıcaklığı
-40°C~125°C TA

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