SPD35N10T

Specifications

Category

Power MOSFET

Typical Gate Charge10v Nc

49

Eu Rohs

Compliant

Maximum Drain Source Voltage V

100

Maximum Power Dissipation Mw

150000

Maximum Operating Temperature C

175

Eccn Us

EAR99

Maximum Gate Source Voltage V

±20

Minimum Operating Temperature C

-55

Process Technology

SIPMOS

Configuration

Single

Channel Type

N

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

12.2

Parça Durumu

Obsolete

Typical Turnoff Delay Time Ns

39

Hts

8541.29.00.95

Typical Rise Time Ns

63

Channel Mode

Enhancement

Maximum Continuous Drain Current A

35

Typical Gate Charge Vgs Nc

49@10V

Typical Fall Time Ns

23

Maximum Drain Source Resistance Mohm

44@10V

Typical Input Capacitance Vds Pf

1180@25V