SPD26N06S2L35T

Specifications

Typical Gate Charge10v Nc

18

Maximum Power Dissipation Mw

68000

Maximum Operating Temperature C

175

Eccn Us

EAR99

Svhc

Yes

Channel Type

N

Typical Turnon Delay Time Ns

6

Hts

8541.29.00.95

Maximum Gate Threshold Voltage V

2

Typical Gate Charge Vgs Nc

18@10V

Maximum Drain Source Resistance Mohm

35@10V

Maximum Drain Source Voltage V

55

Category

Power MOSFET

Eu Rohs

Not Compliant

Minimum Operating Temperature C

-55

Maximum Gate Source Voltage V

±20

Svhc Exceeds Threshold

Yes

Configuration

Single

Process Technology

OptiMOS

Typical Turnoff Delay Time Ns

29

Number Of Elements Per Chip

1

Parça Durumu

Obsolete

Typical Rise Time Ns

21

Typical Input Capacitance Vds Pf

590@25V

Maximum Continuous Drain Current A

30

Channel Mode

Enhancement

Typical Fall Time Ns

20