SPB80N04S2H4T

Specifications

Typical Rise Time Ns

36

Category

Power MOSFET

Typical Turnon Delay Time Ns

14

Typical Gate Charge10v Nc

111

Eccn Us

EAR99

Maximum Operating Temperature C

175

Hts

8541.29.00.95

Eu Rohs

Not Compliant

Maximum Power Dissipation Mw

300000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

4430@25V

Svhc

Yes

Maximum Gate Source Voltage V

±20

Parça Durumu

Obsolete

Svhc Exceeds Threshold

Yes

Configuration

Single

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

40

Typical Fall Time Ns

35

Process Technology

SIPMOS

Channel Type

N

Maximum Continuous Drain Current A

80

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

4@10V

Typical Turnoff Delay Time Ns

46

Typical Gate Charge Vgs Nc

111@10V