SP001075902

Specifications

Typical Gate Threshold Voltage V

1.6

Typical Turnoff Delay Time Ns

4.3@Q 1|8.8@Q 2

Number Of Elements Per Chip

2

Typical Gate Plateau Voltage V

2.6@Q 1|2.3@Q 2

Ambalaj

Tape and Reel

Svhc Exceeds Threshold

Yes

Maximum Drain Source Resistance Mohm

3@10V@Q 1|0.8@10V@Q 2

Maximum Diode Forward Voltage V

1

Maximum Drain Source Voltage V

25

Operating Junction Temperature C

-55 to 150

Maximum Pulsed Drain Current Tc25c A

160

Maximum Positive Gate Source Voltage V

16

Maximum Idss Ua

1

Channel Type

N

Process Technology

OptiMOS 5

Typical Rise Time Ns

4.7@Q 1|4.3@Q 2

Channel Mode

Enhancement

Maximum Continuous Drain Current A

31@Q 1|50@Q 2

Maximum Power Dissipation Mw

6250

Configuration

Dual

Typical Reverse Transfer Capacitance Vds Pf

38@12V@Q 1|130@12V@Q 2

Typical Turnon Delay Time Ns

4.3@Q 1|5.6@Q 2

Maximum Gate Source Leakage Current Na

100

Svhc

Yes

Eccn Us

EAR99

Typical Gate To Drain Charge Nc

1.4@Q 1|4.7@Q 2

Hts

8541.29.00.95

Parça Durumu

Active

Typical Input Capacitance Vds Pf

780@12V@Q 1|2700@12V@Q 2

Minimum Gate Threshold Voltage V

1.2

Maximum Gate Source Voltage V

±16

Maximum Gate Threshold Voltage V

2

Typical Fall Time Ns

1.4@Q 1|2.6@Q 2

Maximum Gate Resistance Ohm

1.2

Maximum Power Dissipation On Pcb Tc25c W

6.25

Typical Reverse Recovery Charge Nc

10@Q 1|20@Q 2

Maximum Operating Temperature C

150

Typical Gate Charge Vgs Nc

5.6@4.5V@Q 1|20@4.5V@Q 2

Eu Rohs

Compliant with Exemption

Maximum Junction Ambient Thermal Resistance On Pcb Cw

50