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Specifications
- Typical Drain Efficiency
- 41
- Maximum Drain Source Voltage V
- 65
- Parça Durumu
- Obsolete
- Minimum Frequency Mhz
- 470
- Maximum Frequency Mhz
- 860
- Process Technology
- LDMOS
- Configuration
- Dual Common Source
- Maximum Gate Source Voltage V
- 12
- Mode Of Operation
- 2-Tone|ATSC 8VSB
- Ambalaj
- Wafer
- Hts
- 8541.29.00.75
- Channel Type
- N
- Channel Mode
- Enhancement
- Maximum Drain Source Resistance Mohm
- 80(Typ)@10V
- Typical Power Gain Db
- 17.5
- Minimum Operating Temperature C
- -40
- Number Of Elements Per Chip
- 2
- Eccn Us
- EAR99
- Output Power W
- 300
- Maximum Vswr
- 5
- Maximum Power Dissipation Mw
- 761000
- Maximum Operating Temperature C
- 200
- Eu Rohs
- Compliant
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