JANTXV2N6766

Specifications

Kurşunsuz

Contains Lead

Typical Turnoff Delay Time Ns

170(Max)

Yüzey Montaj

NO

Drain Currentmax Id

30 A

Power Dissipation

150 W

Channel Type

N

Onstate Resistance

100 mΩ

Drainsource On Resistancemax

0.09 Ω

Risk Rank

5.19

Drain To Source Breakdown Voltage

200 V

Typical Gate Charge10v Nc

115(Max)

JESD-609 Kodu

e0

Maximum Continuous Drain Current A

30

Package Description

HERMETIC SEALED, TO-204, 2 PIN

Lifecycle Status

Production (Last Updated: 2 years ago)

Minimum Operating Temperature C

-55

Transistor Application

SWITCHING

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Polaritychannel Type

N-CHANNEL

Maximum Power Dissipation Mw

150000

Drain Currentmax Abs Id

30 A

Automotive

No

Channel Mode

Enhancement

Part Life Cycle Code

Active

Package Body Material

METAL

Maximum Drain Source Voltage V

200

REACH Uyumluluk Kodu

compliant

Pcb Changed

2

Terminal Pozisyonu

BOTTOM

Typical Gate Charge Vgs Nc

115(Max)@10V

Number Of Elements Per Chip

1

Tab

Tab

Package Width

25.53(Max)

Number Of Terminals

2

Mounting

Through Hole

Maximum Gate Source Voltage V

±20

Terminal Formu

PIN/PEG

Continuous Drain Current Id

19 A

Case Connection

DRAIN

Reference Standard

MIL-19500/543