JANSR2N7383

Specifications

ECCN Kodu

EAR99

Number Of Elements Per Chip

1

Reflow Temperaturemax S

NOT SPECIFIED

Maximum Operating Temperature C

150

Package Width

5.08(Max)

Avalanche Energy Rating Eas

165 mJ

Typical Input Capacitance Vds Pf

1360@25V

Maximum Drain Source Resistance Mohm

800@12V

Parça Durumu

Active

Maximum Power Dissipation Mw

75000

Terminal Kaplaması

TIN LEAD

Qualification Status

Not Qualified

Part Life Cycle Code

Active

Typical Turnon Delay Time Ns

30(Max)

Pcb Changed

3

Typical Fall Time Ns

65(Max)

Yüzey Montaj

NO

Polaritychannel Type

P-CHANNEL

Jedec95 Code

TO-257AA

Minimum Operating Temperature C

-55

Number Of Terminals

3

Maximum Drain Source Voltage V

200

Package Height

10.92(Max)

Supplier Package

TO-257AA

REACH Uyumluluk Kodu

compliant

Typical Gate Charge Vgs Nc

45(Max)@12V

Risk Rank

5.22

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Jesd30 Code

S-CSFM-P3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drainsource On Resistancemax

0.8 Ω

Category

Power MOSFET

Üretici Parça No

JANSR2N7383

Eu Rohs

Not Compliant

Pin Sayısı

3

Transistor Application

SWITCHING

Additional Feature

RADIATION HARDENED

Typical Turnoff Delay Time Ns

75(Max)

Eccn Us

EAR99

Pulsed Drain Currentmax Idm

26 A