JANSG2N7433

Specifications

Maximum Gate Source Leakage Current Na

100

Mounting

Through Hole

Minimum Operating Temperature C

-55

Parça Durumu

Active

Hts

8541.29.00.95

Configuration

Single

Maximum Operating Temperature C

150

Maximum Gate Source Voltage V

±20

Maximum Idss Ua

25

Pin Sayısı

3

Channel Mode

Enhancement

Maximum Continuous Drain Current A

35

Category

Power MOSFET

Package Width

6.6(Max)

Typical Rise Time Ns

200(Max)

Channel Type

N

Process Technology

HEXFET

Ppap

No

Maximum Drain Source Resistance Mohm

77@12V

Package Length

13.84(Max)

Automotive

No

Number Of Elements Per Chip

1

Pcb Changed

3

Typical Fall Time Ns

130(Max)

Maximum Power Dissipation Mw

250000

Supplier Package

TO-254AA

Typical Input Capacitance Vds Pf

5300@25V

Eccn Us

Contact Export

Maximum Drain Source Voltage V

200

Supplier Temperature Grade

Military

Eu Rohs

Not Compliant

Maximum Gate Threshold Voltage V

4

Lead Shape

Through Hole

Standard Package Name

TO-254-AA

Tab

Tab

Package Height

13.84(Max)

Typical Turnon Delay Time Ns

50(Max)

Typical Gate Charge Vgs Nc

290(Max)@12V

Typical Turnoff Delay Time Ns

200(Max)