IRLML6402PBF

Specifications

Supplier Package

SOT-23

Maximum Gate Source Voltage V

±12

Eccn Us

EAR99

Configuration

Single

Channel Type

P

Maximum Drain Source Voltage V

20

Maximum Gate Source Leakage Current Na

100

Maximum Idss Ua

1

Pin Sayısı

3

Typical Input Capacitance Vds Pf

633@10V

Typical Gate Charge Vgs Nc

8@5V

Maximum Operating Temperature C

150

Typical Gate To Drain Charge Nc

2.8

Lead Shape

Gull-wing

Maximum Gate Threshold Voltage V

1.2

Typical Rise Time Ns

48

Channel Mode

Enhancement

Eu Rohs

Compliant

Package Height

1.02(Max)

Automotive

No

Typical Fall Time Ns

381

Parça Durumu

Obsolete

Ppap

No

Typical Gate To Source Charge Nc

1.2

Minimum Operating Temperature C

-55

Typical Reverse Recovery Charge Nc

11

Typical Turnoff Delay Time Ns

588

Maximum Continuous Drain Current A

3.7

Maximum Power Dissipation Mw

1300

Material

Si

Standard Package Name

SOT

Maximum Drain Source Resistance Mohm

65@4.5V

Mounting

Surface Mount

Typical Turnon Delay Time Ns

350

Package Width

1.4(Max)

Process Technology

HEXFET

Typical Output Capacitance Pf

145

Number Of Elements Per Chip

1

Package Length

3.04(Max)

Category

Power MOSFET