IRHNS67264SCS

Specifications

Typical Gate Charge Vgs Nc

220(Max)@12V

Material

Si

Maximum Continuous Drain Current A

50

Maximum Power Dissipation Mw

250000

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

6912@25V

Maximum Drain Source Voltage V

250

Maximum Operating Temperature C

150

Minimum Operating Temperature C

-55

Typical Turnon Delay Time Ns

50(Max)

Number Of Elements Per Chip

1

Typical Fall Time Ns

50(Max)

Typical Turnoff Delay Time Ns

100(Max)

Category

Power MOSFET

Configuration

Single

Hts

8541.29.00.95

Channel Mode

Enhancement

Typical Rise Time Ns

150(Max)

Maximum Drain Source Resistance Mohm

40@12V

Eccn Us

EAR99

Channel Type

N