IRHNS57160

Specifications

Channel Type

N

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

12@12V

Typical Rise Time Ns

125(Max)

Configuration

Single

Automotive

No

Parça Durumu

Active

Operating Junction Temperature C

-55 to 150

Typical Turnoff Delay Time Ns

75(Max)

Category

Power MOSFET

Typical Fall Time Ns

50(Max)

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

35(Max)

Maximum Operating Temperature C

150

Minimum Operating Temperature C

-55

Ppap

No

Maximum Drain Source Voltage V

100

Eu Rohs

Supplier Unconfirmed

Typical Input Capacitance Vds Pf

6440@25V

Maximum Power Dissipation Mw

250000

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

75

Typical Gate Charge Vgs Nc

160(Max)@12V

Material

Si