IRHNM593110

Specifications

Maximum Idss Ua

10

Maximum Power Dissipation Mw

23000

Material

Si

Typical Gate Charge Vgs Nc

11(Max)@12V

Pin Sayısı

3

Eu Rohs

Not Compliant

Maximum Drain Source Voltage V

100

Minimum Operating Temperature C

-55

Process Technology

R5

Typical Turnoff Delay Time Ns

24(Max)

Typical Turnon Delay Time Ns

18(Max)

Typical Fall Time Ns

85(Max)

Number Of Elements Per Chip

1

Typical Rise Time Ns

26(Max)

Channel Mode

Enhancement

Maximum Gate Threshold Voltage V

4

Parça Durumu

Active

Hts

8541.29.00.95

Configuration

Single

Maximum Gate Source Voltage V

±20

Maximum Gate Source Leakage Current Na

100

Package Width

8.15(Max)

Maximum Continuous Drain Current A

3.1

Ppap

No

Supplier Package

SMD-0.2

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

379@25V

Category

Power MOSFET

Mounting

Surface Mount

Package Length

5.74(Max)

Maximum Drain Source Resistance Mohm

1200@12V

Pcb Changed

3

Channel Type

P

Eccn Us

Contact Export

Automotive

No

Package Height

2.69(Max)