IRHNM57214SESCS

Specifications

Minimum Operating Temperature C

-55

Eu Rohs

Supplier Unconfirmed

Maximum Drain Source Voltage V

250

Maximum Power Dissipation Mw

40000

Pin Sayısı

3

Material

Si

Typical Gate Charge Vgs Nc

9.1(Max)@12V

Typical Rise Time Ns

6.3(Max)

Channel Mode

Enhancement

Configuration

Single

Parça Durumu

Active

Typical Turnoff Delay Time Ns

16.8(Max)

Typical Fall Time Ns

14(Max)

Typical Turnon Delay Time Ns

6.3(Max)

Number Of Elements Per Chip

1

Supplier Package

CSMD-0.2

Maximum Operating Temperature C

150

Ppap

No

Typical Input Capacitance Vds Pf

308@25V

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

3.7

Package Width

8.15(Max)

Channel Type

N

Maximum Drain Source Resistance Mohm

1700@12V

Pcb Changed

3

Automotive

No

Package Height

2.69(Max)

Category

Power MOSFET

Operating Junction Temperature C

-55 to 150

Mounting

Surface Mount

Package Length

5.74(Max)